一 : MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

44eee MAX4144EEE+T中文资料

扩展：3344eee com / ee3344eee / 35eee4454eee4548

二 : TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

7733 TLC7733中文资料

IMPORTANT NOTICE

Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinueany product or service without notice, and advise customers to obtain the latest version of relevant informationto verify, before placing orders, that information being relied on is current and complete. All products are soldsubject to the terms and conditions of sale supplied at the time of order acknowledgement, including thosepertaining to warranty, patent infringement, and limitation of liability.

TI warrants performance of its semiconductor products to the specifications applicable at the time of sale inaccordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extentTI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarilyperformed, except those mandated by government requirements.

CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OFDEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICALAPPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, ORWARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHERCRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TOBE FULLY AT THE CUSTOMER’S RISK.

In order to minimize risks associated with the customer’s applications, adequate design and operatingsafeguards must be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance or customer product design. TI does not warrant or representthat any license, either express or implied, is granted under any patent right, copyright, mask work right, or otherintellectual property right of TI covering or relating to any combination, machine, or process in which suchsemiconductor products or services might be or are used. TI’s publication of information regarding any thirdparty’s products or services does not constitute TI’s approval, warranty or endorsement thereof.

Copyright ? 1999, Texas Instruments Incorporated

扩展：ht7733中文资料 / tlc2543中文资料 / tlc5615中文资料

三 : FC114中文资料

元器件交易网www.cecb2b.com

Ordering number:EN3082

Features

· On-chip bias resistors (R1=10k?, R2=10k?)

· Composite type with 2 transistors contained in theCP package currently in use, improving the mount-ing efficiency greatly.

·The FC114 is formed with two chips, being equiva-lent to the 2SC3398, placed in one package.

· Excellent in thermal equilibrium and pair capability.

Package Dimensions

unit:mm2067

[FC114]

Electrical Connection

E1:Emitter1B1:Base1

C2:Collerctor2E2:Emitter2B2:Base2

C1:Collerctor1SANYO:CP6

Specifications

Absolute Maximum Ratings at Ta = 25?C

Parameter

Collector-to-BaseVoltageCollector-to-EmitterVoltageEmitter-to-BaseVoltageCollectorCurrentCollectorCurrent(Pulse)CollectorDissipationTotalDissipationJunctionTemperatureStorageTemperature

SymbolVCBOVCEOVEBOICICPPCPTTjTstg

1unit

Conditions

Ratings

505010100200200300150

–55to+150

UnitVVVmAmAmWmW?C?C

Electrical Characteristics at Ta = 25?C

Parameter

CollectorCutoffCurrentCollectorCutoffCurrentEmitterCutoffCurrentDCCurrentGainGain-BandwidthProductOutputCapacitanceC-ESaturationVoltageC-BBreakdownVoltageC-EBreakdownVoltageInputOFF-StateVoltageInputON-StateVoltageInputResistanceResistanceRatio

SymbolICBOICEOIEBOhFEfTCob

VCB=40V,IE=0VCE=40V,IB=0VEB=5V,IC=0VCE=5V,IC=10mAVCE=10V,IC=5mAVCB=10V,f=1MHz

50500.81.07.00.9

1.12.0101.0

1.54.0131.1

17050

2503.30.1

0.3

MHzpFVVVVVk?

250

Conditions

Ratings

min

typ

max0.10.5360

UnitμAμAμA

VCE(sat)IC=10mA.IB=0.5mAV(BR)CBOIC=10μA,IE=0V(BR)CEOIC=100μA,RBE=∞VI(off)VI(on)R1R1/R2

VCE=5V,IC=100μAVCE=0.2V,IC=10mA

Note: The specifications shown above are for each individual transistor. Marking:114

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

52098HA (KT)/4139MO, TS No.3082-1/2

fc114 FC114中文资料

元器件交易网www.cecb2b.com

扩展：fc114蓝牙模块资料 / ina114中文资料 / ina114ap中文资料

本文标题：中文资料-MAX4144EEE+T中文资料
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